S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 72

• Manufacturer Part Number: S29PL-N
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

70
WE#
DQ6
DQ2
11.8.5 Erase and Programming Performance
Embedded
Erasing
Enter
Note:
toggle DQ2 and DQ6.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
Sector Erase Time
Chip Erase Time
Word Programming Time
Effective Word Programming Time
utilizing Program Write Buffer
Total 32-Word Buffer
Programming Time
Chip Programming Time
using 32-Word Buffer (3)
Erase Suspend/Erase Resume
Program Suspend/Program Resume
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
Typical program and erase times assume the following conditions: 25°C, 3.0 V V
programming typicals assume checkerboard pattern. All values are subject to change.
Under worst case conditions of 90°C, V
The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See
Contact the local sales office for minimum cycling endurance values in specific applications and operating conditions.
See Application Note
Word programming specification is based upon a single word programming operation not utilizing the write buffer.
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to
Erase
Table 12.1
Suspend
Parameter
Erase
(Notes)
and
Erase Suspend
128 Kword
32 Kword
Table 12.2
Erase Suspend/Resume Timing
Read
S29PL-N MirrorBit™ Flash Family
Figure 11.15 DQ2 vs. DQ6
Suspend Program
for further information on command definitions.
Enter Erase
Condition
Device
ACC
ACC
ACC
ACC
ACC
ACC
ACC
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
= 2.7 V, 100,000 cycles. All values are subject to change.
P r e l i m i n a r y
157.3 (PL256N)
78.6 (PL127N)
78.6 (PL129N)
202 (PL256N)
100 (PL127N)
130 (PL256N)
100 (PL256N)
Suspend
100(PL129N)
Program
65 (PL127N)
65 (PL129N)
50 (PL127N)
50 (PL129N)
Erase
(Note
300
192
Typ
1.6
1.6
0.3
0.3
9.4
40
24
for more details.
6
1)
Erase Suspend
900 (PL256N)
450 (PL127N)
450 (PL129N)
512 (PL256N)
256 (PL127N)
256 (PL129N)
315 (PL256N)
158 (PL127N)
158 (PL129N)
200 (PL256N)
100 (PL127N)
100 (PL129N)
Read
(Note
3000
1920
Max
<20
<20
400
240
94
60
7
7
4
4
2)
Resume
Erase
Unit
CC
µs
µs
µs
µs
µs
s
s
s
, 10,000 cycles. Additionally,
Erase
Excludes 00h programming
prior to erasure (4)
Excludes system level overhead
(5)
Excludes system level overhead
(5)
S29PL-N_00_A4 November 23, 2005
Comments
(Notes)
Complete
Erase