S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 37

• Manufacturer Part Number: S29PL-N
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

November 23, 2005 S29PL-N_00_A4
7.4.7 Accelerated Program
The system can also write the Autoselect command sequence when the device is in Program Sus-
pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes
are not stored in the memory array. When the device exits the Autoselect mode, the device re-
verts to Program Suspend mode, and is ready for another valid operation. See
more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See
The system must write the Program Resume command (address bits are don't cares) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the de-
vice has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
Accelerated single word programming, write buffer programming, sector erase, and chip erase
operations are enabled through the ACC function. This method is faster than the standard chip
program and erase command sequences.
The accelerated chip program and erase functions must not be used more than 10
times per sector. In addition, accelerated chip program and erase should be performed at room
temperature (25
This function is primarily intended to allow faster manufacturing throughput at the factory. If the
system asserts V
pass mode and uses the higher voltage on the input to reduce the time required for program and
erase operations. The system can then use the Write Buffer Load command sequence provided
by the Unlock Bypass mode. Note that if a Write-to-Buffer-Abort Reset is required while in Unlock
Software Functions and Sample Code
*((UINT16 *)base_addr + 0x000) = 0x00B0;
*((UINT16 *)base_addr + 0x000) = 0x0030;
Cycle
Cycle
1
1
°
HH
C
P r e l i m i n a r y
±
on this input, the device automatically enters the aforementioned Unlock By-
10
°
Operation
Operation
C).
S29PL-N MirrorBit™ Flash Family
Write
Write
(LLD Function = lld_ProgramSuspendCmd)
(LLD Function = lld_ProgramResumeCmd)
Table 7.13 Program Suspend
Table 7.14 Program Resume
Write Operation Status
/* write suspend command
/* write resume command
Bank Address
Word Address
Bank Address
Word Address
www.amd.com
www.amd.com
for more information.
and www.fujitsu.com)
and www.fujitsu.com)
*/
*/
Autoselect
00B0h
0030h
Data
Data
for
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