S29PL-N SPANSION [SPANSION], S29PL-N Datasheet - Page 47

• Manufacturer Part Number: S29PL-N
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

7.6
November 23, 2005 S29PL-N_00_A4
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to V
viding an address, command, and data. Addresses are latched on the last falling edge of WE# or
CE#, while data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase
one sector, multiple sectors, or the entire device.
space that each sector occupies. The device address space is divided into four banks: Banks B
and C contain only 128 Kword sectors, while Banks A and D contain both 32 Kword boot sectors
in addition to 128 Kword sectors. A bank address is the set of address bits required to uniquely
select a bank. Similarly, a sector address is the address bits required to uniquely select a sector.
I
Characteristics
CC2
in
DC Characteristics
contains timing specification tables and timing diagrams for write operations.
P r e l i m i n a r y
S29PL-N MirrorBit™ Flash Family
represents the active current specification for the write mode. see
Table 6.1
and
Table 6.2
IL
and OE# to V
indicate the address
IH
when pro-
AC
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