s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 138

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s71ws512ne0bfwzz

Manufacturer Part Number
s71ws512ne0bfwzz
Description
Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
TIMING DIAGRAMS (Continued)
Notes
Notes
138
POWER-UP Timing #1
POWER-UP Timing #2
CE2
CE2
CE#1
CE#1
V
V
V
V
IOPS
*1: V
*2: The both of CE#1 and CE2 shall be brought to High together with V
*3: The t
*1: V
*2: The t
*3: CE#1 shall be brought to High prior to or together with CE2 Low to High transition.
CCPS
CCPS
IOPS
Otherwise POWER-UP Timing#2 must be applied for proper operation.
If CE2 became High prior to V
DDQ
DDQ
CHH
C2HL
shall be applied and reach the specified minimum level prior to V
shall be applied and reach specified minimum level prior to V
0V
0V
0V
0V
specifies after V
specifies from CE2 Low to High transition after V
V
*2
*2
V
IOPS
IOPS
DD
*3
min
min
reaches specified minimum level and applicable to both CE#1 and CE2.
DD
*1
*1
reached specified minimum level, t
V
V
CCPS
CCPS
128Mb pSRAM
t
t
min
C2HL
C2HL
min
P r e l i m i n a r y
*1,*2
*1
*2
*2
t
CHH
*3
t
CSP
DD
t
C2LP
reaches specified minimum level.
DD
DDQ
C2HL
applied.
t
DD
CHS
prior to V
is defined from V
applied.
S71WS512NE0BFWZZ_00_A1 June 28, 2004
t
CHH
DD
applied.
DD
minimum.

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