dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 7

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

4000
3000
2000
1000
0
0
Conditions:
T
C
dI/dt = 300A/µs,
dI
j
S
FG
= 25˚C, I
= 2.0µF,
/dt = 30A/µs
5000
4000
3000
2000
1000
500
0
FGM
0
Fig.9 Turn-on energy vs peak forward gate current
= 30A,
Fig.8 Turn-on energy vs on-state current
Peak forward gate current I
1000
20
On-state current I
1500
Conditions:
T
C
dI/dt = 300A/ s,
dI
j
40
S
FG
= 25˚C, I
= 2.0 F, R
/dt = 30A/ s
T
- (A)
T
FGM
= 2000A,
2000
S
60
V
V
V
= 10 Ohms
- (A)
D
D
D
= 3000V
= 2000V
= 1000V
V
V
V
D
D
D
= 3000V
= 2000V
= 1000V
2500
80
3000
DG648BH45
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