dg648bh Dynex Semiconductor, dg648bh Datasheet
dg648bh
Related parts for dg648bh
dg648bh Summary of contents
Page 1
... 125 DRM Double side cooled. Half sine 50Hz Double side cooled. Half sine 50Hz. HS DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-3.0 January 2000 KEY PARAMETERS I TCM V DRM I T(AV /dt T Outline type code: H. Conditions RRM V ...
Page 2
... DG648BH45 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) on-state current TSM for fusing di /dt Critical rate of rise of on-state current T Rate of rise of off-state voltage dV / Peak stray inductance in snubber circuit S GATE RATINGS Symbol Parameter Peak reverse gate voltage V RGM ...
Page 3
... I = 100A 16V, No gate/cathode resistor RGM V = 3000V 2000A, dI /dt = 300A 30A, rise time < 1 2000A DRM Snubber Cap /dt = 40A DG648BH45 Min. Max. Units - 3 100 1 3 3170 3.2 s ...
Page 4
... DG648BH45 CURVES 2.0 1.5 1.0 0.5 0 -50 Fig.1 Maximum gate trigger voltage/current vs junction temperature 4000 Measured under pulse conditions. I G(ON) Half sine wave 10ms 3000 2000 1000 0 0 4/19 - Junction temperature 25˚C j 1.0 2.0 3.0 Instantaneous on-state voltage V Fig.2 On-state characteristics 8.0 6 100 125 150 - (˚ ...
Page 5
... Snubber capacitance C Fig.3 Maximum dependence of I 0.020 0.015 0.010 0.005 0 0.001 0.01 Fig.4 Maximum (limit) transient thermal impedance - double side cooled 0.0001 0.001 Pulse duration - (s) Fig.5 Surge (non-repetitive) on-state current vs time , DRM 2.0 3.0 4.0 - (µ TCM S 0.1 1.0 Time - (s) 0.01 0.1 DG648BH45 dc 10 1.0 5/19 ...
Page 6
... DG648BH45 4000 Conditions G(ON) 3000 2000 60˚ 30˚ 1000 0 0 Mean on-state current I Fig.6 Steady state rectangluar wave conduction loss - double side cooled 3000 Conditions G(ON) 2000 60˚ 30˚ 1000 0 0 200 Mean on-state current I Fig.7 Steady state sinusoidal wave conduction loss - double side cooled ...
Page 7
... Fig.9 Turn-on energy vs peak forward gate current V = 3000V 2000V 1000V D 1500 2000 On-state current I - (A) T Conditions 25˚ 2000A 2 Ohms S S dI/dt = 300A /dt = 30A 3000V 2000V 1000V (A) FGM DG648BH45 2500 3000 80 7/19 ...
Page 8
... DG648BH45 4000 Conditions 125˚ 2 3000 dI /dt = 300A /dt = 30A 2000 1000 0 0 5000 4000 3000 2000 1000 Peak forward gate current I Fig.11 Turn-on energy vs peak forward gate current 8/19 = 30A, FGM 500 1000 1500 On-state current I Fig ...
Page 9
... Conditions 125˚ FGM 3000V /dt = 300A /dt = 30A 1500 2000 2500 - (A) T Conditions 125˚ 2000A 2 Ohms, S dI/dt = 300A /dt = 30A 3000V (A) FGM DG648BH45 = 30A, 3000 9/19 ...
Page 10
... DG648BH45 5000 Conditions 25˚ 2.0µ /dt = 40A/µs GQ 4000 3000 2000 1000 0 0 500 6000 Conditions 25˚ 2.0µ 2000A T 5000 4000 3000 2000 20 Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 1000 1500 On-state current I - (A) T Fig ...
Page 11
... Rate of rise of reverse gate current dI Fig.18 Turn-off energy loss vs rate of rise of reverse gate current V DRM 0.75x V 0.5x V 1500 2000 On-state current STATE CURRENT 0.75x /dt - (A/µs) GQ DG648BH45 DRM DRM 2500 3000 V DRM DRM 0.5x V DRM 70 11/19 ...
Page 12
... DG648BH45 8000 Conditions 125˚ 0.75x /dt = 40A/µs GQ 6000 4000 2000 0 0 20.0 Conditions 2.0µ /dt = 40A/µs GQ 15.0 10.0 5 12/19 , DRM 500 1000 1500 On-state current I Fig.19 Turn-off energy vs on-state current 500 1000 1500 On-state current I Fig.20 Gate storage time vs on-state current C = 2.0µ ...
Page 13
... Fig.21 Gate storage time vs rate of rise of reverse gate current 2.0 Conditions 2 /dt = 40A 1.5 1.0 0 500 1000 On-state current I Fig.22 Gate fall time vs on-state current T = 125˚ 25˚ /dt - (A/µ 125˚ 25˚C j 1500 2000 - (A) T DG648BH45 70 2500 3000 13/19 ...
Page 14
... DG648BH45 2.5 Conditions 2.0µ 2000A T 2.0 1.5 1.0 0.5 20 Fig.23 Gate fall time vs rate of rise of reverse gate current 800 Conditions 2.0µ /dt = 40A/µs GQ 600 400 200 0 0 500 14/ Rate of rise of reverse gate current dI 1000 1500 Turn-off current I T Fig.24 Peak reverse gate current vs turn-off current T = 125˚ ...
Page 15
... Fig.25 Peak reverse gate current vs rate of rise of reversegate current 8000 Conditions 2.0µ /dt = 40A/µs GQ 6000 4000 2000 0 0 500 1000 Fig.26 Turn-off gate charge vs on-state current / 125˚ 25˚C j 1500 2000 On-state current I - (A) T DG648BH45 = 125˚C = 25˚ 2500 3000 15/19 ...
Page 16
... DG648BH45 7000 6000 5000 4000 3000 20 Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 500 0 0.1 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/ Rate of rise of reverse gate current 2250V 3000V D 1.0 10 Gate cathode resistance R Conditions 2.0µF, ...
Page 17
... RG(min 16V RG(max) These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 0. / TAIL G(ON) 0. 0.5I GQM V (RG)BR I GQM DG648BH45 17/19 ...
Page 18
... DG648BH45 PACKAGE DETAILS For further package information, please contact Customer Service. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 Cathode Aux. Tube Gate Tube 9.6 18/19 0.05 x 2.0 0.1 deep (One in each electrode) 15˚ 52 Ø100 Ø62.85 Ø62.85 55 Nominal weight: 820g Clamping force: 20kN 10% ...
Page 19
... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...