dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 15

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dg648bh

Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
8000
6000
4000
2000
0
0
700
650
600
550
500
Conditions:
C
dI
750
S
GQ
20
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
= 2.0µF,
/dt = 40A/µs
Conditions:
C
I
T
S
= 2000A
= 2.0 F,
500
Rate of rise of reverse gate current dI
Fig.26 Turn-off gate charge vs on-state current
30
1000
On-state current I
40
1500
50
T
- (A)
2000
GQ
/dt - (A/ s)
T
T
60
j
j
= 125˚C
T
= 25˚C
T
j
j
= 125˚C
= 25˚C
2500
70
3000
DG648BH45
15/19

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