dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
dg648bh
Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH.pdf
(19 pages)
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0.010
0.020
0.015
0.005
0.0001
20
0.001
40
30
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
0
0
3000
2000
1000
0
0
Fig.5 Surge (non-repetitive) on-state current vs time
Conditions:
T
dI
j
GQ
= 125˚C, V
/dt = 40A/µs
Fig.3 Maximum dependence of I
0.001
0.01
Snubber capacitance C
1.0
DM
= V
Pulse duration - (s)
DRM
Time - (s)
,
2.0
0.01
0.1
S
- (µF)
TCM
3.0
on C
1.0
0.1
S
4.0
10
1.0
dc
DG648BH45
5/19
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