dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 14
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dg648bh
Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH.pdf
(19 pages)
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DG648BH45
14/19
800
600
400
200
0
0
Conditions:
C
dI
2.5
2.0
1.5
1.0
0.5
S
GQ
20
= 2.0µF,
/dt = 40A/µs
Conditions:
C
I
T
S
= 2000A
= 2.0µF,
Fig.23 Gate fall time vs rate of rise of reverse gate current
500
Rate of rise of reverse gate current dI
Fig.24 Peak reverse gate current vs turn-off current
30
1000
Turn-off current I
40
1500
50
T
- (A)
2000
GQ
/dt - (A/µs)
T
T
60
j
j
= 125˚C
T
T
= 25˚C
j
j
= 125˚C
= 25˚C
2500
70
3000
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