dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 13

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dg648bh

Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
2.0
1.5
1.0
0.5
0
0
30
25
20
15
10
Conditions:
C
dI
S
20
GQ
= 2.0 F,
/dt = 40A/ s
Conditions:
C
I
T
Fig.21 Gate storage time vs rate of rise of reverse gate current
S
= 2000A
= 2.0µF,
500
Rate of rise of reverse gate current dI
30
Fig.22 Gate fall time vs on-state current
1000
On-state current I
40
1500
50
T
- (A)
2000
GQ
/dt - (A/µs)
60
T
T
T
j
T
j
= 125˚C
j
= 25˚C
j
= 125˚C
= 25˚C
2500
70
3000
DG648BH45
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