dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 12

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

DG648BH45
12/19
8000
6000
4000
2000
20.0
15.0
10.0
5.0
0
0
0
0
Conditions:
T
V
dI
Conditions:
C
dI
j
DM
S
GQ
GQ
= 125˚C,
= 2.0µF,
/dt = 40A/µs
/dt = 40A/µs
= 0.75x V
500
500
DRM
Fig.20 Gate storage time vs on-state current
Fig.19 Turn-off energy vs on-state current
,
1000
1000
On-state current I
On-state current I
1500
1500
T
T
- (A)
- (A)
2000
2000
C
T
S
j
= 125˚C
= 2.0µF
C
T
S
2500
j
2500
= 4.0µF
= 25˚C
3000
3000