dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 12
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dg648bh
Manufacturer Part Number
dg648bh
Description
Gate Turn-off Gto - 4500v
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH.pdf
(19 pages)
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DG648BH45
12/19
8000
6000
4000
2000
20.0
15.0
10.0
5.0
0
0
0
0
Conditions:
T
V
dI
Conditions:
C
dI
j
DM
S
GQ
GQ
= 125˚C,
= 2.0µF,
/dt = 40A/µs
/dt = 40A/µs
= 0.75x V
500
500
DRM
Fig.20 Gate storage time vs on-state current
Fig.19 Turn-off energy vs on-state current
,
1000
1000
On-state current I
On-state current I
1500
1500
T
T
- (A)
- (A)
2000
2000
C
T
S
j
= 125˚C
= 2.0µF
C
T
S
2500
j
2500
= 4.0µF
= 25˚C
3000
3000
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