dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 11

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

10000
8000
6000
4000
2000
0
0
12000
10000
Conditions:
T
C
dI
8000
6000
4000
j
S
GQ
= 125˚C,
= 2.0µF,
/dt = 40A/µs
20
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
Conditions:
T
C
I
T
FIG 17 TURN OFF ENERGY
j
S
= 2000A
500
= 125˚C,
= 2.0µF,
Rate of rise of reverse gate current dI
Fig.17 Turn-off energy vs on-state current
30
1000
On-state current I
40
1500
ON STATE CURRENT
T
50
- (A)
2000
GQ
/dt - (A/µs)
0.75x V
0.5x V
60
V
0.75x V
DRM
0.5x V
2500
DRM
V
DRM
DRM
DRM
DRM
70
3000
DG648BH45
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