hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 64

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hyb18t512160afl-3.7

Manufacturer Part Number
hyb18t512160afl-3.7
Description
512-mbit Ddr2 Sdram
Manufacturer
Infineon Technologies Corporation
Datasheet
3.23.2
If A10 is HIGH when a Write Command is issued, the
Write with Auto-Precharge function is engaged. The
DDR2
operation after the completion of the write burst plus the
write recovery time delay (WR), programmed in the
MRS register, as long as
undergoing Auto-Precharge from the completion of the
write burst may be reactivated if the following two
conditions are satisfied.
Figure 51
WL = 2,
Figure 52
WL = 4,
Data Sheet
C M D
C K , C K
D Q
C M D
D Q S ,
D Q S
D Q S ,
D Q S
C K , C K
D Q
t
t
SDRAM
DAL
DAL
A10 ="high"
W R IT E w /A P
P o ste d C A S
A10 ="high"
T0
Write with Auto-Precharge
Write with Auto-Precharge Example 1 (
= 6 (WR = 3,
Write with Auto-Precharge Example 2 (WR +
= 6 (WR = 3,
T0
W R IT E
w /A P
WL = RL-1 = 4
WL = RL-1 = 2
automatically
T1
T3
N O P
N O P
t
t
RP
RP
t
RAS
= 3), BL = 4
= 3), BL = 4
is satisfied. The bank
DIN A0 DIN A1 DIN A2 DIN A3
DIN A0 DIN A1 DIN A2 DIN A3
T2
T4
begins
N O P
N O P
precharge
T3
T5
N O P
N O P
Completion of the Burst Write
Completion of the Burst Write
t
65
RC
T4
T6
N O P
N O P
1. The last data-in to bank activate delay time (
2. The RAS cycle time (
In DDR2 SDRAM’s the write recovery time delay (WR)
has to be programmed into the MRS mode register. As
long as the analog
WR can be programmed between 2 and 6 clock cycles.
Minimum Write to Activate command spacing to the
same bank = WL + BL/2 +
Limit)
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
t
WR +
activation has been satisfied.
>=tRASmin.
RP
tRCmin.
Limit)
T5
T7
t
N O P
N O P
>=tRAS
RP
>=tRC
) has been satisfied.
tDAL
WR
WR
A u to -P re ch a rg e B e g in s
t
tDAL
A u to -P re ch a rg e B e g in s
T8
WR
T6
N O P
N O P
timing parameter is not violated,
512-Mbit DDR2 SDRAM
t
RC
t
DAL
) from the previous bank
Functional Description
T7
T9
.
N O P
09112003-SDM9-IQ3P
N O P
tRP
tRP
Rev. 1.6, 2005-08
BW-AP423
BW-AP223
B a n k A
A ctiva te
B a n k A
A c tiv a te
T12
t
DAL
=

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