hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 3

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

HYB18T512400AF(L), HYB18T512800AF(L), HYB18T512160AF(L)
Revision History: 2005-08, Rev. 1.6
Page
92
Chapter 2
Chapter 3.1 Updated State Diagram
Chapter 5.1 Changed note Absolute maximum ratings-table
Previous Version: 2005-07 Rev. 1.5
Chapter 6
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send us your proposal (including a reference to this document) to:
[e-mail]
Subjects (major changes since last revision)
Added low-power components HYB18T256[40/80/16]0AFL-3.7
Updated
Updated Pin Configuration - various editorial changes on notes
Corrected # of adresses to 16 in Figure 4 - Block Diagram 32 Mbit x 4 I/O x4 Internal Memory Banks
Updated Figure 8: Initialization Sequence after Power-up
Corrected
I
I
DD
DD
Currents (
Currents
I
DD2P
,
I
DD3P1
,
I
DD6
)
Template: mp_a4_s_rev314 / 3 / 2005-05-02