hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 20

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 2
Notes
1. RDQS / RDQS are enabled by EMRS(1) command.
2. If RDQS / RDQS is enabled, the DM function is
3. When enabled, RDQS & RDQS are used as strobe
Data Sheet
disabled
signals during reads.
Pin Configuration for ×8 components, PG-TFBGA-60 (top view)
21
4.
5. Ball position L8 is A13 for 512-Mbit and is Not
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
V
V
V
Connected on 256-Mbit.
DDL
DDL
SSDL
is connected to
and
,
V
SS
V
Pin Configuration and Block Diagrams
, and
SSDL
are power and ground for the DLL.
V
SSQ
V
512-Mbit DDR2 SDRAM
are isolated on the device.
DD
on the device.
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08
V
DD
,
V
DDQ
,