mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 57

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mt46v128m4bn

Manufacturer Part Number
mt46v128m4bn
Description
512mb X4, X8, X16 Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 30:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
Random READ Accesses
Notes:
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
CK#
CK#
CK#
1. DO n (or x or b or g) = data-out from column n (or column x or column b or column g).
2. BL = 2, BL = 4, or BL = 8 (if BL = 4 or BL = 8, the following burst interrupts the previous).
3. n', x', b', or g' indicate the next data-out following DO n, DO x, DO b, or DO g, respectively.
4. READs are to an active row in any bank.
5. Shown with nominal
DQ
DQ
DQ
CK
CK
CK
Bank,
Col n
READ
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
T0
CL = 2
Bank,
Col x
Bank,
READ
READ
Bank,
READ
Col x
t
Col x
AC,
T1
T1
T1
CL = 2.5
t
DQSCK, and
CL = 3
57
T2
Bank,
READ
READ
Col b
READ
Bank,
Bank,
Col b
Col b
T2n
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DO
DQSQ.
n
T2n
T3
DO
DO
512Mb: x4, x8, x16 DDR SDRAM
n'
n
Bank,
Col g
Bank,
Bank,
READ
Col g
T3n
READ
READ
Col g
T3
T3
DON’T CARE
DO
DO
DO
n'
n
x
T3n
T3n
T4
DO
DO
n'
DO
x'
x
©2000 Micron Technology, Inc. All rights reserved.
T4n
T4
T4
NOP
NOP
NOP
DO
DO
DO
x
b
x'
TRANSITIONING DATA
T4n
T4n
T5
DO
x'
DO
DO
b'
b
Operations
T5n
T5
T5
NOP
NOP
NOP
DO
DO
DO
b'
b
g
T5n
T5n
DO
b'

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