mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 25

• Manufacturer Part Number: mt46v128m4bn
• Description: 512mb X4, X8, X16 Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 19:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
AC Characteristics
Parameter
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
Terminating voltage delay to V
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-
READ command
Exit SELF REFRESH-to-READ command
Data valid output window (DVW)
Electrical Characteristics and Recommended AC Operating Conditions (-6, -6T, -75E)
(continued)
Notes: 1–6, 15–18, 34 apply to entire table; Notes appear on pages 28–34;
Notes:
1. -6 (FBGA) available in 256Mb and 512Mb densities only.
128Mb, 256Mb, 512Mb
1Gb
SS
Symbol
t
t
WPRES
t
t
t
t
t
WPRE
t
WPST
t
t
XSNR
XSNR
XSRD
RPST
t
WTR
RRD
VTD
n/a
WR
25
t
Min
-6 (FBGA)
0.25
QH -
200
0.4
0.4
12
15
75
0
0
1
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
Electrical Specifications – DC and AC
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
1
512Mb: x4, x8, x16 DDR SDRAM
t
Min
0.25
-6T (TSOP)
126
200
QH -
0.4
0.4
12
15
75
0
0
1
t
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
t
Min
©2000 Micron Technology, Inc. All rights reserved.
0.25
QH -
200
0.4
0.4
15
15
75
0
0
1
–
-75E
t
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
Units Notes
t
t
t
t
t
CK
ns
ns
CK
ns
CK
ns
CK
ns
ns
CK
ns
21, 22
44
20
26