tn28f010-90 Intel Corporation, tn28f010-90 Datasheet - Page 28

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tn28f010-90

Manufacturer Part Number
tn28f010-90
Description
1024k 128k X 8 Cmos Flash Memory
Manufacturer
Intel Corporation
Datasheet

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28F010
ERASE AND PROGRAMMING PERFORMANCE
NOTES
1 ‘‘Typicals’’ are not guaranteed but based on samples from production lots Data taken at 25 C 12 0V V
2 Minimum byte programming time excluding system overhead is 16 msec (10 msec program
while maximum is 400 msec byte (16 msec x 25 loops allowed by algorithm) Max chip programming time is specified lower
than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte
3 Excludes 00H programming prior to erasure
4 Excludes system level overhead
28
Chip Erase Time
Chip Program Time
Parameter
Notes
1 3 4
1 2 4
Min
Typical
1
2
Max
12 5
10
a
6 msec write recovery)
PP
Unit
Sec
Sec

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