tn28f010-90 Intel Corporation, tn28f010-90 Datasheet - Page 16

• Manufacturer Part Number: tn28f010-90
• Description: 1024k 128k X 8 Cmos Flash Memory
• Manufacturer: Intel Corporation

28F010
DC CHARACTERISTICS CMOS COMPATIBLE Commercial Products
16
Symbol
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
I
V
V
V
CC2
CC3
CC4
CC5
PPS
PP1
PP2
PP3
PP4
PP5
ID
IL
IH
OL
OH1
OH2
ID
PPL
PPH
LKO
V
V
V
V
V
V
Current or Standby Current
V
Current
V
V
Current
V
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
A
Voltage
A
Current
V
Operations
V
Operations
V
Voltage
CC
CC
CC
CC
PP
PP
PP
PP
PP
PP
9
9
PP
PP
CC
Intelligent Identifier
Intelligent Identifier
Leakage Current
Read Current ID
Programming
Erase Current
Program Verify
Erase Verify
during Read-Only
during Read Write
Programming Current
Erase Current
Program Verify Current
Erase Verify Current
Erase Write Lock
Parameter
Notes
1 2
1 2
1 2
1 2
1 2
1 2
1 2
1 2
1 2
1
1
V
0 85 V
0 7 V
CC
11 50
11 40
b
0 00
Min
2 5
0 5
b
CC
CC
0 4
Typical
Limits
1 0
5 0
5 0
5 0
8 0
6 0
2 0
2 0
90
90
(4)
V
CC
13 00
12 60
Max
g
g
0 45
200
200
5 0
5 0
0 8
6 5
10
15
15
15
30
30
a
10
10
0 5
Unit
mA Programming in Progress
mA Erasure in Progress
mA V
mA V
mA V
mA V
mA V
mA V
mA
mA
mA
V
V
V
V
V
V
V
V
Verify in Progress
Verify in Progress
V
V
V
Programming in Progress
Erasure in Progress
Verify in Progress
Verify in Progress
V
I
V
V
A
NOTE Erase Programs are
Inhibited when V
OL
PP
PP
PP s
PP l
PP s
PP
PP
PP
PP
CC
CC
CC
9
e
e
e
e
e
e
e
e
e
e
e
V
5 8 mA
V
V
V
V
V
V
V
V
V
V
V
V
ID
Test Conditions
CC
CC
CC
PPH
PPH
PPH
PPH
PPH
PPH
CC
CC
CC
Min
Min I
Min I
Program
Erase
Program
Erase
PP
OH
OH
(Continued)
e
e b
e b
V
PPL
2 5 mA
100 mA