VG36641641DT-6 Powerchip, VG36641641DT-6 Datasheet - Page 7

• Manufacturer Part Number: VG36641641DT-6
• Description: CMOS Synchronous Dynamic RAM
• Manufacturer: Powerchip

A.C. Characteristics (Ta = 0 ~ 70°C, V
Notes
1. -5L grade are available only on 4MX16 option.
2. if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
CLK cycle time
CLK to valid output
delay
CLK high pulse width
CLK low pulse width
CKE setup time
CKE hold time
Address setup time
Address hold time
Command setup time
Command hold time
Data input setup time
Data input hold time
Output data hold
time
CLK to output in low - Z
CLK to output in H - Z
ROW cycle time
ROW active time
RAS to CAS delay
Row precharge time
Row active to active delay
Data in to precharge
Data in to ACT command
Transition time
Mode reg. set cycle
Refresh time
VIS
Document :1G5-0177
Parameter
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Sym-
CK3
CK2
AC3
AC2
CH
CL
CKS
CKH
AS
AH
CMS
CMH
DS
DH
OH3
OH2
LZ
HZ
RC
RAS
RCD
RP
RRD
DPL
DAL
T
RSC
REF
bol
38.5
16.5
DD
Min
tDPL
5.5
7.5
2.3
2.3
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
tRP
55
15
11
11
2
2
0
2
1
2
+
-5L
= V
*1
DDQ
100K
Max
10
64
5
6
5
= 3.3 0.3V , V
Min
tDPL
7.5
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
2.5
2.5
2.5
tRP
60
42
18
15
12
12
6
0
1
2
+

-6
VG36644041DT / VG36648041DT / VG36641641DT
Rev.5
*1
100K
Max
10
64
5
6
5
SS
Min
tDPL
7.5
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
2.7
2.7
2.7
63
42
20
15
14
14
tRP
= V
7
0
1
2
+
Limits
-7
SSQ
Max
100K
5.4
5.4
10
64
6
CMOS Synchronous Dynamic RAM
= 0V, unless otherwise noted)
67.5
tDPL
Min
7.5
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
2.7
2.7
tRP
10
45
20
20
15
15
3
0
1
2
+
-7L
Max
100K
5.4
5.4
10
64
6
Min
tDPL
tRP
10
70
50
20
20
20
20
8
3
3
2
1
2
1
2
1
2
1
3
3
0
3
+
1
2
-8H
Page 7
100K
Max
10
64
6
6
6
Unit
tck
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
*2
*2
*2
*2