VG36641641DT-6 Powerchip, VG36641641DT-6 Datasheet - Page 6

• Manufacturer Part Number: VG36641641DT-6
• Description: CMOS Synchronous Dynamic RAM
• Manufacturer: Powerchip

DC Characteristics 2
(Ta = 0 ~ 70°C, V
AC Characteristics (Ta = 0 ~ 70°C, V
Output Load Conditions
Input leakage current (Inputs)
Output leakage current (I/O pins)
High level output voltage
Low level output voltage
AC input Levels (V
Input rise and fall time
Note): 1.if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
VIS
Document :1G5-0177
Parameter
Device
Under
Test
DD
IH
V
V
= V
/V
DDQ
OUT
IL
DDQ
)
= 3.3 0.3V , V
V
DDQ

DD
Symbol
2.0 / 0.8V
= V
I
V
I
V
O (L)
I (L)
OH
OL
SS
1ns
DDQ
= V
= 3.3 0.3V , V
0
Pins not under test = 0V
0
DQ# in H - Z., D
I
I
SSQ
OH
OL


= 2mA
V
V
= -2mA
= 0V, unless otherwise noted)

IN
OUT
Z = 50
Input timing reference level /
Output timing reference level
Output load condition



V
VG36644041DT / VG36648041DT / VG36641641DT
Rev.5
DD(MAX)
V
DD(MAX)
Test Condition
SS
OUT
= V
is disabled
SSQ
= 0V, unless otherwise noted)
CMOS Synchronous Dynamic RAM
50PF
Min
2.4
-5
-5
50pF
1.4V
Page 6
Max
0.4
5
5
Unit
uA
uA
V
V