MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 31

• Manufacturer Part Number: MT58V512V36D
• Description: (MT58xxxx) 16Mb SYNCBURST SRAM
• Manufacturer: Micron Technology

16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and
Density
B = 2Mb, 3.3V V
C = 2Mb, 2.5V V
D = 2Mb, 1.8V V
F = 4Mb, 3.3V V
G = 4Mb, 2.5V V
H = 4Mb, 1.8V V
J = 8Mb, 3.3V V
K = 8Mb, 2.5V V
L = 8Mb, 1.8V V
M = 16Mb, 3.3V V
N = 16Mb, 2.5V V
P = 16Mb, 1.8V V
Product Family
X = SRAM Engineering sample
Product Type
B = QDR
C = QDR burst of 4
D = DDR
F = SyncBurst
G = SyncBurst, Pipelined, Double-Cycle Deslect
H = SyncBurst, Flow-Through
J = ZBT
K = ZBT, Flow-Through
M = SRAM Mechanical sample
S = SRAM
®
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, Pipelined
burst of 2
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, Pipelined, Single-Cycle Deslect
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Q = 32Mb, 3.3V V
R = 32Mb, 2.5V V
S = 32Mb, 1.8V V
T = 64Mb, 3.3V V
V = 64Mb, 2.5V V
W = 64Mb, 1.8V V
X = 128Mb, 3.3V V
Y = 128Mb, 2.5V V
Z = 128Mb, 1.8V V
FBGA PART MARKING GUIDE
Micron Technology, Inc., and Motorola Inc.
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Micron Technology, Inc.
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PIPELINED, DCD SYNCBURST SRAM
16Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Speed Grade
B = -3
C = -3.3
D = -4
F = -4.4
G = -5
H = -6
J = -7
K = -7.5
Width
B = x18, 3.3V V
C = x18, 2.5V V
D = x18, 3.3V & 2.5V V
F = x18, HSTL V
G = x32, 3.3V V
H = x32, 2.5V V
J = x32, 3.3V & 2.5V V
K = x32, HSTL V
L = x36, 3.3V V
M = x36, 2.5V V
N = x36, 3.3V & 2.5V V
P = x36, HSTL V
Q = x72, 3.3V V
R = x72, 2.5V V
S = x72, 3.3V & 2.5V V
T = x72, HSTL V
L = -8
M = -8.5
N = -9
P = -9.5
Q = -10
R = -10.5
S = -11
T = -12
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©2000, Micron Technology, Inc.
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ADVANCE
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