MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 16

• Manufacturer Part Number: MT58V512V36D
• Description: (MT58xxxx) 16Mb SYNCBURST SRAM
• Manufacturer: Micron Technology

I
(Note 1, unless otherwise noted)(0ºC T
NOTE: 1. If V
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. I
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
4. Typical values are measured at 3.3V, 25ºC, and 10ns cycle time.
Voltage tolerances: +3.3V ±0.165 or +2.5V ±0.125V for all values of V
greater output loading.
device is active (not in power-down mode).
DD
DD
is specified with no output current and increases with faster cycle times. I
= +3.3V, then V
V
V
ADSC#, ADSP#, GW#, BWx#, ADV#
ADSC#, ADSP#, GW#, BWx#, ADV#
IH
IH
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs
; All inputs
; All inputs
or V
Device selected; All inputs V
Device deselected; V
Device deselected; V
Device deselected; V
Device selected; V
V
DD
All inputs V
Cycle time
Cycle time
IH
DD
= MAX; Outputs open
; Cycle time
Q = +3.3V or +2.5V. If V
CONDITIONS
V
SS
V
V
SS
SS
+ 0.2 or
+ 0.2 or
+ 0.2 or
t
t
IL
KC (MIN)
KC (MIN)
A
or V
DD
DD
DD
DD
t
+70ºC)
KC (MIN);
= MAX;
= MAX;
= MAX;
= MAX;
V
IH
DD
V
V
;
DD
DD
- 0.2;
DD
IL
- 0.2;
- 0.2;
= +2.5V, then V
16
PIPELINED, DCD SYNCBURST SRAM
SYMBOL TYP
I
I
I
I
16Mb: 1 MEG x 18, 512K x 32/36
I
DD
SB
SB
SB
DD
2
3
4
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
Q = +2.5V.
225
0.4
55
55
DD
8
and V
DD
475
110
110
DD
10
25
-6
Q increases with faster cycle times and
Q.
MAX
-7.5
425
100
10
25
90
-10
325
85
10
25
85
©2000, Micron Technology, Inc.
UNITS NOTES
ADVANCE
mA
mA
mA
mA
mA
2, 3, 4
2, 3, 4
3, 4
3, 4
3, 4