MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 19

• Manufacturer Part Number: MT58V512V36D
• Description: (MT58xxxx) 16Mb SYNCBURST SRAM
• Manufacturer: Micron Technology

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state. After
the device enters SNOOZE MODE, all inputs except ZZ
become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
Outputs (Q)
ALL INPUTS
(except ZZ)
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t
ZZI
t
I
ZZ
ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ V
IH
19
PIPELINED, DCD SYNCBURST SRAM
High-Z
the device to enter SNOOZE MODE. When ZZ becomes
a logic HIGH, I
is met. Any READ or WRITE operation pending when
the device enters SNOOZE MODE is not guaranteed to
complete successfully. Therefore, SNOOZE MODE must
not be initiated until valid pending operations are
completed.
16Mb: 1 MEG x 18, 512K x 32/36
ZZ is an asynchronous, active HIGH input that causes
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
I
t
RZZI
SB
t
RZZ
ZZI
ZZ
2Z
SB
2
Z
2(
is guaranteed after the setup time
MIN
t
0
KC)
DESELECT or READ Only
t
RZZI
2(
2(
MAX
10
t
t
KC)
KC)
t
RZZ
UNITS
©2000, Micron Technology, Inc.
mA
ns
ns
ns
ns
DON’T CARE
ADVANCE
NOTES
1
1
1
1
t
ZZ