MT58V512V36D Micron Technology, MT58V512V36D Datasheet - Page 27

• Manufacturer Part Number: MT58V512V36D
• Description: (MT58xxxx) 16Mb SYNCBURST SRAM
• Manufacturer: Micron Technology

TAP AC TEST CONDITIONS
TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20ºC T
NOTE: 1. All voltages referenced to V
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Input pulse levels ....................................... V
Input rise and fall times ......................................... 1ns
Input timing reference levels ............................. 1.25V
Output reference levels ..................................... 1.25V
Test load termination supply voltage ............... 1.25V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
2. Overshoot:
Undershoot: V
Power-up:
During normal operation, V
pulse widths less than
J
+110ºC; +2.4V V
V
V
IH
IL
IH
(AC)
(AC)
+2.6V and V
t
KHKL (MIN) or operate at frequencies exceeding
DD
-0.5V for t
V
DD
DD
SS
+2.6V unless otherwise noted)
0V V
+ 1.5V for t
(GND).
Q must not exceed V
Output(s) disabled,
DD
CONDITIONS
0V V
I
I
OHC
I
OLC
I
OHT
OLT
IN
2.4V and V
t
KHKH/2
= -100µA
= 100µA
SS
= -2mA
= 2mA
V
IN
to 2.5V
DD
t
KHKH/2
Q (DQx)
V
DD
DD
Q
DD
27
. Control input signals (such as LD#, R/W#, etc.) may not have
PIPELINED, DCD SYNCBURST SRAM
1.4V for t
16Mb: 1 MEG x 18, 512K x 32/36
SYMBOL
V
V
V
V
V
IL
V
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OH
OH
OL
OL
IH
IL
TAP AC Output Load Equivalent
O
I
1
2
1
2
200ms
TDO
f
KF (MAX).
MIN
-0.3
-5.0
-5.0
1.7
2.1
1.7
Z = 50
O
Figure 7
V
DD
MAX
0.7
5.0
5.0
0.2
0.7
+ 0.3
1.25V
UNITS
µA
µA
©2000, Micron Technology, Inc.
V
V
V
V
V
V
50
ADVANCE
20pF
NOTES
1, 2
1, 2
1
1
1
1