MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 84
MT29F128G08WAAC6
Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
1.MT29F128G08WAAC6.pdf
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WRITE PROTECT Operation
Figure 57:
Figure 58:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
ERASE Enable
ERASE Disable
It is possible to enable and disable PROGRAM and ERASE commands using WP#.
Figures 57 through 68 illustrate the setup time (
PROGRAM or ERASE command is latched into the command register. After command
cycle 1 is latched, WP# must not be toggled until the command is complete and the
device is ready (status register bit 5 is “1”).
WE#
WP#
R/B#
WE#
WP#
R/B#
I/Ox
I/Ox
Micron Confidential and Proprietary
t WW
t WW
60h
60h
84
www.DataSheet.net/
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D0h
D0h
t
WW) required from WP# toggling until a
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
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