MT58L1MY18F Micron Semiconductor Products, Inc., MT58L1MY18F Datasheet - Page 9

• Manufacturer Part Number: MT58L1MY18F
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 2:
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
SYMBOL
NF/DQPa
NF/DQPb
NF/DQPd
NF/DQPc
V
TDO
V
V
DD
NC
NF
DD
SS
Q
FBGA Ball Descriptions (continued)
Output
Supply
Supply
Supply
TYPE
I/O
NF
–
–
No Function/Parity Data I/Os: On the x32 version, these are No Function (NF). On the x18
version, byte “a” parity is DQPa; byte “b” parity is DQPb. On the x36 version, byte “a” parity
is DQPa; byte “b” parity is DQPb; byte “c” parity is DQPc; byte “d” parity is DQPd.
IEEE 1149.1 Test Outputs: JEDEC-standard 3.3V or 2.5V I/O levels.
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
Ground: GND.
No Connect: These balls are not internally connected to the die. They may be left floating,
driven by signals, or connected to ground to improve package heat dissipation.
No Function: These balls are internally connected to the die and have the capacitance of an
input pin. They may be left floating, driven by signals, or connected to ground to improve
package heat dissipation.
FLOW-THROUGH SYNCBURST SRAM
9
18Mb: 1 MEG x 18, 512K x 32/36
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.