MT58L1MY18F Micron Semiconductor Products, Inc., MT58L1MY18F Datasheet - Page 2

• Manufacturer Part Number: MT58L1MY18F
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

(OE#), clock (CLK) and snooze enable (ZZ). There is
also a burst mode input (MODE) that selects between
interleaved and linear burst modes. The data out (Q) is
enabled by OE#. WRITE cycles can be from one to two
bytes wide (x18) or from one to four bytes wide (x32/
x36), as controlled by the write control inputs.
status processor (ADSP#) or address status controller
(ADSC#) inputs. Subsequent burst addresses can be
internally generated as controlled by the burst
advance input (ADV#).
simplify WRITE cycles. This allows self-timed write
cycles. Individual byte enables allow individual bytes
to be written. During WRITE cycles on the x18 device,
BWa# controls DQa pins/balls and DQPa; BWb# con-
trols DQb pins/balls and DQPb. During WRITE cycles
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Asynchronous inputs include the output enable
Burst operation can be initiated with either address
Address and write control are registered on-chip to
FLOW-THROUGH SYNCBURST SRAM
2
on the x32 and x36 devices, BWa# controls DQa pins/
balls and DQPa; BWb# controls DQb pins/balls and
DQPb; BWc# controls DQc pins/balls and DQPc; BWd#
controls DQd pins/balls and DQPd. GW# LOW causes
all bytes to be written. Parity bits are only available on
the x18 and x36 versions.
and PowerPC systems and those systems that benefit
from a wide synchronous data bus. The device is also
ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide
applications.
sramds) for the latest data sheet.
Dual Voltage I/O
function. The 2.5V V
I/O function.
18Mb: 1 MEG x 18, 512K x 32/36
The device is ideally suited for 486, Pentium
Please refer to Micron’s Web site
The 3.3V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
device is tested for 3.3V and 2.5V I/O
DD
device is tested for only 2.5V
(www.micron.com/
©2003 Micron Technology, Inc.
®
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