MT58L1MY18F Micron Semiconductor Products, Inc., MT58L1MY18F Datasheet - Page 3

• Manufacturer Part Number: MT58L1MY18F
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and tim-
ing diagrams for detailed information.
SA0, SA1, SAs
SA0, SA1, SAs
MODE
ADSC#
ADSP#
BWE#
BWb#
BWa#
ADV#
GW#
CE2#
OE#
CLK
CE#
CE2
ADSC#
MODE
ADSP#
BWd#
BWb#
BWc#
BWa#
BWE#
ADV#
GW#
CE2#
OE#
CLK
CE#
CE2
20
19
WRITE REGISTER
WRITE REGISTER
REGISTER
ADDRESS
BYTE “b”
BYTE “a”
REGISTER
ENABLE
Figure 3: Functional Block Diagram
Figure 4: Functional Block Diagram
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
REGISTER
ENABLE
CLR
AND LOGIC
COUNTER AND
CLR
ADDRESS
REGISTER
COUNTER
BINARY
BINARY
LOGIC
20
2
Q1
Q0
Q1
Q0
SA0-SA1
19
SA0'
SA0-SA1
SA1'
512K x 32/36
1 Meg x 18
18
17
SA0'
SA1'
FLOW-THROUGH SYNCBURST SRAM
3
9
9
9
9
9
9
18Mb: 1 MEG x 18, 512K x 32/36
20
19
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
9
9
9
9
9
512K x 8 x 4
512K x 9 x 4
1 Meg x 9 x 2
MEMORY
ARRAY
MEMORY
(x32)
(x36)
ARRAY
36
36
18
SENSE
AMPS
SENSE
AMPS
36
18
18
4
OUTPUT
BUFFERS
2
OUTPUT
BUFFERS
REGISTERS
INPUT
36
REGISTERS
©2003 Micron Technology, Inc.
INPUT
18
DQPa
DQPb
DQPc
DQPd
DQs
DQPb
DQPa
DQs