MT57V1MH18A Micron Semiconductor Products, Inc., MT57V1MH18A Datasheet - Page 16

• Manufacturer Part Number: MT57V1MH18A
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT57V1MH18A_16_F.fm – Rev. F, Pub. 3/03
1. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, etc.
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. The second NOP cycle is not necessary for correct device operation; however, at high clock frequencies it may be
BWx#
R/W#
CQ#
LD#
DQ
CQ
K#
C#
required to prevent bus contention.
A
K
C
NOP
1
Qx
t KHKL
DD
t
IVKH
, HSTL, Pipelined DDRb2 SRAM
t KHCH
t KLKH
t AVKH t KHAX
A0
READ
(burst of 2)
2
t KHCH
t KHKH
t KHIX
t CHQX1
t CHQV
A1
READ
(burst of 2)
3
t KHK#H
t CHQV
Q00
t CQHQV
4
NOP
Q01
t CHQX
READ/WRITE Timing
Q10
t CQHQX
2.5V V
5
Q11
NOP
(Note 3)
Figure 6:
16
t CHQX
t CQHQZ
t CHQZ
DD
A2
WRITE
(burst of 2)
6
, HSTL, PIPELINED DDRb2 SRAM
t DVKH
t KHDX
t KHKL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t KLKH
D20
t CHCQH
A3
WRITE
(burst of 2)
7
D21
t KHKH
1 MEG x 18, 512 x 36
t DVKH
A4
t KHDX
D30
READ
(burst of 2)
8
t KHK#H
D31
DON’T CARE
9
©2003 Micron Technology Inc.
Q40
t CQHQX1
10
UNDEFINED
Q41