MT55L256L32P Micron Semiconductor Products, Inc., MT55L256L32P Datasheet - Page 17

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MT55L256L32P

Manufacturer Part Number
MT55L256L32P
Description
8Mb: 512K X 18, 256K X 32/36 Pipelined ZBT SRAM
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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I
(Note 1) (0°C
TQFP THERMAL RESISTANCE
NOTE: 1. V
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_C.p65 – Rev. 2/02
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
Snooze Mode
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. I
3. “Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
4. Typical values are measured at +3.3V, +25°C and 10ns cycle time.
5. This parameter is sampled.
configuration.
greater output loading.
is active (not in deselected mode).
DD
DD
is specified with no output current and increases with faster cycle times. I
Q = +3.3V ±0.165V for 3.3V I/O configuration; V
T
A
or
ADV/LD#
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs
All inputs
+70°C; V
Device selected; All inputs
or
Device deselected; V
Device deselected; V
Device deselected; V
V
V
Device selected; V
DD
DD
All inputs
Cycle time
V
- 0.2; Cycle time
IH
= MAX; Outputs open
DD
; Cycle time
Test conditions follow standard test methods
V
CONDITIONS
= +3.3V ±0.165V unless otherwise noted)
CKE#
V
V
IH
SS
SS
; All inputs
and procedures for measuring thermal
ZZ
+ 0.2 or
+ 0.2 or
V
V
impedance, per EIA/JESD51.
IL
V
t
IH
KC (MIN)
IH
or
DD
;
DD
DD
DD
= MAX;
t
KC (MIN);
= MAX;
= MAX;
= MAX;
CONDITIONS
V
V
V
t
V
DD
DD
IH
KC (MIN)
SS
;
- 0.2;
- 0.2;
+ 0.2
V
IL
DD
17
Q = +2.5V +0.4V/-0.125V for 2.5V I/O
SYMBOL
I
I
I
I
I
I
SB
DD
SB
SB
SB
DD
2
2
3
4
1
Z
8Mb: 512K x 18, 256K x 32/36
TYP
200
0.5
0.5
10
45
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6
500
120
DD
25
10
25
10
-6
PIPELINED ZBT SRAM
Q increases with faster cycle times and
SYMBOL
JA
JC
MAX
-7.5
400
25
10
25
75
10
TYP
40
300
8
-10
20
10
25
60
10
UNITS NOTES
UNITS NOTES
©2002, Micron Technology, Inc.
°C/W
°C/W
m A
m A
m A
m A
m A
m A
2, 3, 4
2, 3, 4
3, 4
3, 4
3, 4
4
5
5

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