MT55L256L32F Micron Semiconductor Products, Inc., MT55L256L32F Datasheet - Page 19

• Manufacturer Part Number: MT55L256L32F
• Description: 8Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

3.3V I/O AC TEST CONDITIONS
LOAD DERATING CURVES
ZBT SRAM timing is dependent upon the capacitive
loading on the outputs.
versus voltage curves.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
Input pulse levels ................................... V
Input rise and fall times ..................................... 1ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
3.3V I/O Output Load Equivalents
The Micron 512K x 18, 256K x 32, and 256K x 36
Consult the factory for copies of I/O current
Q
Q
351
Z = 50
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
317
5pF
50
SS
to 3.3V
19
2.5V I/O AC TEST CONDITIONS
Input pulse levels ................................... V
Input rise and fall times ..................................... 1ns
Input timing reference levels ........................ 1.25V
Output reference levels ................................. 1.25V
Output load ............................. See Figures 3 and 4
2.5V I/O Output Load Equivalents
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
Q
225
Z = 50
O
Figure 3
Figure 4
+2.5V
V = 1.25V
T
225
5pF
50
©2002, Micron Technology, Inc.
SS
to 2.5V