MT54V1MH18A Micron Semiconductor Products, Inc., MT54V1MH18A Datasheet - Page 4

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MT54V1MH18A

Manufacturer Part Number
MT54V1MH18A
Description
18Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
NOTE:
18Mb: 2.5V V
MT54V1MH18A_16_F.fm – Rev. F, Pub. 3/03
1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed
2. For 1 Meg x 18, n = 18, a = 18.
3. For 512K x 36, n = 18, a = 36.
D (Data In)
ADDRESS
information.
BW0#
BW1#
W#
DD
R#
K#
K#
, HSTL, QDRb2 SRAM
K
K
W#
R#
n
a
REGISTRY
REGISTRY
ADDRESS
& LOGIC
& LOGIC
DATA
n
a
K
Figure 2: Functional Block Diagram
W
R
T
E
I
G
R
E
2
1 Meg x 18; 512K x 36
W
R
T
E
I
D
V
R
E
R
I
MEMORY
ARRAY
2 n x a
4
N
E
E
S
S
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
M
A
P
S
MUX
DD
1 MEG x 18, 512K x 36
a
, HSTL, QDRb2 SRAM
C
G
A
R
E
O
U
U
T
P
T
K, K#
C, C#
or
a
O
U
U
T
P
T
E
E
C
T
S
L
O
U
U
T
P
T
©2003 Micron Technology, Inc.
U
B
E
R
F
F
(Echo Clock Out)
(Data Out)
2
CQ, CQ#
Q

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