MT54V1MH18A Micron Semiconductor Products, Inc., MT54V1MH18A Datasheet - Page 13

• Manufacturer Part Number: MT54V1MH18A
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 12: AC Electrical Characteristics and Recommended Operating Conditions
Notes 13, 16–19, notes appear following paramater tables on page 14; °C £ T
18Mb: 2.5V V
MT54V1MH18A_16_F.fm – Rev. F, Pub. 3/03
DESCRIPTION
Clock
Clock cycle time (K, K#, C, C#)
Clock HIGH time (K, K#, C, C#)
Clock LOW time (K, K#, C, C#)
Clock to clock# (K®K#­, C®C#­)
Clock# to clock (K#®K, C#®C)
Clock to data clock (K®C­, K#­®C#­)
Output Times
C, C# HIGH to output valid
C, C# HIGH to output hold
C HIGH to output High-Z
C HIGH to output Low-Z
C, C# HIGH to CQ, CQ# HIGH
CQ, CQ# HIGH to output valid
CQ, CQ# HIGH to output hold
CQ HIGH to output High-Z
CQ HIGH to output Low-Z
Setup Times
Address valid to K rising edge
Control inputs valid to K rising edge
Data-in valid to K, K# rising edge
Hold Times
K rising edge to address hold
K rising edge to control inputs hold
K, K# rising edge to data-in hold
DD
, HSTL, QDRb2 SRAM
t
SYMBOL
t
t
CQHQX1
t
t
t
t
t
CHCQH
CQHQV
CQHQX
CQHQZ
t
KHK#H
K#HKH
t
t
t
CHQX1
t
t
t
t
t
t
t
t
t
KHKH
KHCH
CHQV
CHQX
CHQZ
AVKH
DVKH
KHAX
KHDX
KHKL
KLKH
IVKH
KHIX
-0.40
-0.40
MIN
6.0
2.4
2.4
2.7
2.7
0.0
1.2
1.2
1.2
0.7
0.7
0.7
0.7
0.7
0.7
-6
13
MAX
0.40
0.40
2.0
2.5
2.5
2.6
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-0.45
-0.45
MIN
7.5
3.0
3.0
3.4
3.4
0.0
1.2
1.2
1.2
0.8
0.8
0.8
0.8
0.8
0.8
A
-7.5
£ +70°C; T
MAX
DD
0.45
0.45
2.5
3.0
3.0
3.2
1 MEG x 18, 512K x 36
, HSTL, QDRb2 SRAM
J
£ +95°C; V
-0.50
-0.50
MIN
3.5
3.5
4.6
4.6
0.0
1.2
1.2
1.2
1.0
1.0
1.0
1.0
1.0
1.0
10
-10
MAX
0.50
0.50
3.0
3.0
3.0
3.2
DD
= 2.5V ±0.1V
©2003 Micron Technology, Inc.
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
20
20
20
16
16
16
16
16
16