HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 9

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
READ 1
READ FOR COPY-BACK
READ ID
RESET
PAGE PROGRAM (start)
COPY BACK PGM (start)
CACHE PROGRAM
BLOCK ERASE
READ STATUS REGISTER
RANDOM DATA INPUT
RANDOM DATA OUTPUT
CACHE READ START
CACHE READ EXIT
EXTENDED READ STATUS
2nd Cycle
2nd Cycle
3rd Cycle
4th Cycle
3rd Cycle
4th Cycle
1st Cycle
1st Cycle
FUNCTION
IO0
IO0
A12
A20
A11
A19
A0
A8
A0
A8
72h/73h/74h/75h
Table 4: Address Cycle Map(x16)
Table 3: Address Cycle Map(x8)
1st CYCLE
IO1
IO1
A13
A21
A12
A20
A1
A9
A1
A9
00h
00h
90h
FFh
80h
85h
80h
60h
70h
85h
05h
00h
34h
Table 5: Command Set
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
IO2
IO2
A10
A14
A22
A10
A13
A21
A2
A2
2nd CYCLE
D0h
30h
35h
10h
10h
15h
E0h
31h
-
-
-
-
-
-
IO3
IO3
A11
A15
A23
A14
A22
A3
A3
0
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
IO4
IO4
3rd CYCLE
A16
A24
A15
A23
A4
A4
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IO5
IO5
A17
A25
A16
A24
A5
A5
0
0
Acceptable command
during busy
IO6
IO6
A18
A26
A17
A25
A6
A6
0
0
Preliminary
Yes
Yes
Yes
IO7
IO7
A19
A27
A18
A26
A7
A7
0
0
9