HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 18

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
Symbol
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
V
T
T
Vcc
the device at these or any other conditions above those indicated in the Operating sections of this specification is
IO
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
BIAS
T
STG
A
(2)
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Table 9: Absolute maximum ratings
Parameter
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
-50 to 125
-65 to 150
-0.6 to 2.7
-0.6 to 2.7
-25 to 85
-40 to 85
0 to 70
1.8V
Value
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-25 to 85
-40 to 85
0 to 70
Preliminary
3.3V
Unit
℃
℃
℃
℃
℃
V
V
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