HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 23

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
IO
0
1
2
3
4
5
6
7
DEVICE IDENTIFIER BYTE
Write Protect
Ready/Busy
Ready/Busy
Pass / Fail
Program
Pagae
NA
NA
NA
NA
2nd
3rd
4th
1st
Write Protect
Ready/Busy
Ready/Busy
Pass / Fail
Erase
Block
NA
NA
NA
NA
Table 16: Device Identifier Coding
Table 15: Status Register Coding
Pass / Fail (N-1)
Cache Register
Pass / Fail (N)
Controller Bit
Write Protect
Program
Cache
P/E/R
Free
NA
NA
NA
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Page Size, Block Size, Spare Size, Organization
Write Protect
Ready/Busy
Ready/Busy
Read
NA
NA
NA
NA
NA
Manufacturer Code
Device Identifier
DESCRIPTION
Don't care
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Controller Bit
Ready/Busy
Cache
Read
P/E/R
Pass: ‘0’ Fail: ‘1’
(Only for Cache Program,
else Don’t care)
Busy: ‘0’ Ready’: ‘1’
Active: ‘0’ Idle: ‘1’
Protected: ‘0’ Not
Pass: ‘0’ Fail: ‘1’
Protected: ‘1’
CODING
Preliminary
-
-
-
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