HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 10

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
CLE
H
H
L
L
L
L
L
X
X
X
X
ALE
H
H
L
L
L
L
L
X
X
X
X
CE#
L
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE#
H
H
X
X
X
X
Table 6: Mode Selection
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Falling
RE#
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP#
H
H
H
H
H
X
X
X
X
L
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
Command Input
Address Input(4 cycles)
Command Input
Address Input(4 cycles)
MODE
Preliminary
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