HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 20

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage
Level
Output Low Voltage Level
Output Low Current
(RB#)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (1.7V - 1.95Volt & 2.7V - 3.6V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Symbol
(RB#)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
Table 10: DC and Operating Characteristics
OL
LO
OH
OL
LI
IH
IL
CE#=V
PRE=WP#=0V/Vcc
PRE=WP#=0V/Vcc
Test Conditions
V
CE#=Vcc-0.2,
V
OUT
I
I
Table 11: AC Conditions
IN
I
I
OH
OH
t
CE#=V
V
V
OL
OL
RC
=0 to 3.6V
OL
OL
IL
=0 to 3.6V
=-100uA
=-400uA
=100uA
=2.1mA
=50ns,
, I
=0.1V
=0.4V
-
-
-
-
OUT
1 TTL GATE and CL=30pF
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
IH
=0mA
,
0V to Vcc
1.8Volt
Vcc / 2
5ns
Vcc-0.4
Vcc-0.1
-
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-
-
1.8Volt
Typ
10
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
8
8
8
-
-
-
-
-
-
-
-
-
-
-
Value
Vcc+
Max
± 10
± 10
0.3
0.4
0.1
15
15
15
50
1
4
-
-
-
-
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Min
-0.3
2.4
2
8
-
-
-
-
-
-
-
-
-
-
-
0.4V to 2.4V
3.3Volt
3.3Volt
Typ
1.5V
10
10
10
10
5ns
-
-
-
-
-
-
-
-
-
-
Preliminary
Vcc+
± 10
± 10
Max
0.3
0.8
0.4
20
20
20
50
10
1
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V
V
20