BUW13F NXP Semiconductors, BUW13F Datasheet - Page 9

• Manufacturer Part Number: BUW13F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 13
handbook, halfpage
handbook, halfpage
Silicon diffused power transistors
(1) I
(2) I
(3) I
T
Fig.10 Collector-emitter saturation voltage as a
V
The values of R
I
Bon
j
CC
V CEsat
= 25 C; solid line: typical values; dotted line: maximum values.
(V)
requirements.
= 250 V; t
C
C
C
10
= 5 A.
= 10 A.
= 15 A.
10
1
10
1
V IM
function of base current.
Fig.12 Test circuit resistive load.
0
2
p
B
= 20 s; V
t p
and R
T
L
are selected in accordance with I
10
IM
= 6 to +8 V; t
1
(1)
R B
R L
p
(2)
/T = 0.01.
1
V CC
D.U.T.
(3)
MGE244
I B (A)
MGB871
Con
10
and
9
handbook, halfpage
handbook, halfpage
T
t
r
j
= 125 C.
h FE
20 ns.
10
10
I B
I C
1
2
10
90%
10%
90%
10%
Fig.11 DC current gain; typical values.
Fig.13 Switching time waveforms with
2
resistive load.
t r 30 ns
10
t on
1
BUW13F; BUW13AF
V CE = 5 V
1
1V
t s
Product specification
10
I B on
t f
I C (A)
MBC098
I B off
I C on
MBB731
t
t
10
2