BUW13F NXP Semiconductors, BUW13F Datasheet - Page 3

• Manufacturer Part Number: BUW13F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30 5 N force on centre of package.
2. Mounted with heatsink compound and 30 5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mounted without heatsink compound and 30 5 N force on centre of package.
2. Mounted with heatsink compound and 30 5 N force on centre of package.
ISOLATION CHARACTERISTICS
Note
1. Repetitive peak operation with RH
1997 Aug 13
R
R
V
V
I
I
I
I
I
P
T
T
V
C
SYMBOL
SYMBOL
SYMBOL
Csat
C
CM
B
BM
stg
j
CESM
CEO
tot
isolM
th j-h
th j-a
isol
Silicon diffused power transistors
thermal resistance from junction to external heatsink note 1
thermal resistance from junction to ambient
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
isolation voltage from all terminals to external heatsink (peak value); note 1 2000
isolation capacitance from collector to external heatsink
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
PARAMETER
PARAMETER
65% under clean and dust-free conditions.
PARAMETER
V
open base
see Figs 3 and 4
t
t
T
T
p
p
h
h
BE
< 20 ms; see Fig 4
= 20 ms
= 0
25 C; see Fig.2; note 1
25 C; see Fig.2; note 2
3
CONDITIONS
note 2
CONDITIONS
BUW13F; BUW13AF
21
65
MIN.
VALUE
MAX.
3.4
2.5
35
Product specification
850
1000
400
450
10
8
15
30
6
9
37
50
+150
150
MAX.
V
pF
UNIT
UNIT
K/W
K/W
K/W
V
V
V
V
A
A
A
A
A
A
W
W
C
C
UNIT