BUW13F NXP Semiconductors, BUW13F Datasheet - Page 8

• Manufacturer Part Number: BUW13F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 13
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
I
(1) V
T
(1) I
C
j
V BEsat
V CEsat
/I
= 25 C.
B
Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
V BE
(V)
(V)
= 5.
C
BE
2.0
1.5
1.0
0.5
1.6
1.4
1.2
1.0
0.8
= 15 A.
0
; T
10
0
j
= 25 C.
1
(2) I
(3) I
C
C
Fig.9 Base-emitter voltage as a function of base current; typical values.
(2) V
(3) V
= 10 A.
= 5 A.
1
BE
CE
; T
; T
j
j
= 100 C.
= 100 C.
2
1
(4) V
(1)
(2)
(3)
(4)
CE
(1)
(2)
(3)
; T
j
= 25 C.
8
3
10
4
BUW13F; BUW13AF
I C (A)
5
Product specification
I B (A)
MGB912
MGB915
10
6
2