BUW13F NXP Semiconductors, BUW13F Datasheet - Page 4

• Manufacturer Part Number: BUW13F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1997 Aug 13
V
V
V
I
I
I
h
Switching times resistive load (see Figs 12 and 13)
t
t
t
Switching times inductive load (see Figs 14 and 15)
t
SYMBOL
j
Csat
CES
EBO
on
s
f
s
FE
CEOsust
CEsat
BEsat
= 25 C unless otherwise specified.
Silicon diffused power transistors
collector-emitter sustaining voltage I
collector-emitter saturation voltage
base-emitter saturation voltage
collector saturation current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
turn-on time
storage time
fall time
storage time
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
PARAMETER
L = 25 mH; see Figs 6 and 7
I
Figs 8 and 10
I
Figs 8 and 10
I
I
see Fig.8
V
V
note 1
V
T
V
V
see Fig.11
V
see Fig.11
I
I
I
I
I
I
I
V
I
V
C
C
C
C
C
Con
Con
Con
Con
Con
Con
Con
Con
j
CE
CE
CE
EB
CE
CE
CL
CL
= 125 C; note 1
= 100 mA; I
= 10 A; I
= 8 A; I
= 10 A; I
= 8 A; I
= 10 A; I
= 8 A; I
= 10 A; I
= 8 A; I
= 10 A; I
= 8 A; I
= 10 A; I
= 250 V; T
= 8 A; I
= 300 V; T
= 1.5 V
= V
= V
= 9 V; I
= 5 V; I
= 5 V; I
CONDITIONS
CESMmax
CESMmax
4
B
B
B
B
= 1.6 A; see
= 1.6 A;
C
Bon
Bon
Bon
B
C
C
= 2 A; see
= 2 A; see Fig.8
Bon
Bon
Bon
B
= 0
= 1.6 A;
= 20 mA;
= 1.5 A;
Boff
= 2 A;
c
c
= I
= I
= I
; V
; V
= 100 C
= 100 C
= I
= I
= I
= 0;
Boff
Boff
Boff
BE
BE
Boff
Boff
Boff
= 1.6 A
= 1.6 A
= 1.6 A
= 0;
= 0;
= 2 A
= 2 A
= 2 A
400
450
10
10
MIN.
BUW13F; BUW13AF
18
20
2.8
2.8
TYP.
Product specification
1.5
1.5
1.6
1.6
10
8
1
4
10
35
35
1
1
4
4
0.8
0.8
3.5
3.5
MAX.
V
V
V
V
V
V
A
A
mA
mA
mA
s
s
s
s
s
s
s
s
UNIT