BUW13F NXP Semiconductors, BUW13F Datasheet - Page 6
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BUW13F
Manufacturer Part Number
BUW13F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW13F.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
1997 Aug 13
handbook, full pagewidth
Silicon diffused power transistors
T
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) P
(2) Second breakdown limits (independent of temperature).
mb
= 25 C.
tot max
and P
tot peak max
lines.
10
10
10
10
(A)
I C
10
10
1
2
1
2
3
4
1
I C max
I CM max
10
Fig.4 Forward bias SOAR.
I
= 0.01
BUW13F
BUW13AF
10
6
2
II
50 s
200 s
500 s
100 s
20 s
1 ms
2 ms
5 ms
10 ms
20 ms
DC
t p =
10
3
V CE (V)
MGB929
BUW13F; BUW13AF
10
4
Product specification