BUW13F NXP Semiconductors, BUW13F Datasheet - Page 2

• Manufacturer Part Number: BUW13F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
PINNING
QUICK REFERENCE DATA
1997 Aug 13
V
V
V
I
I
I
P
t
SYMBOL
Csat
C
CM
f
Converters
Inverters
Switching regulators
Motor control systems.
CESM
CEO
CEsat
tot
Silicon diffused power transistors
PIN
mb
1
2
3
base
collector
emitter
mounting base;
electrically isolated
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
BUW13F
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
DESCRIPTION
PARAMETER
ook, halfpage
Front view
1
V
open base
see Figs 8 and 10
see Figs 3 and 4
t
T
resistive load; see Fig.13
Fig.1 Simplified outline (SOT199) and symbol.
p
h
BE
< 20 ms; see Fig 4
2
= 0
25 C; see Fig.2
2
CONDITIONS
MSB012
3
handbook, halfpage
BUW13F; BUW13AF
850
1000
400
450
1.5
10
8
15
30
37
0.8
MAX.
MBB008
Product specification
1
V
V
V
V
V
A
A
A
A
W
2
3
s
UNIT