BUW13F NXP Semiconductors, BUW13F Datasheet
BUW13F
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BUW13F Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 ...
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... Fig.1 Simplified outline (SOT199) and symbol. CONDITIONS open base see Figs 8 and 10 see Figs 3 and 4 t < 20 ms; see Fig see Fig.2 h resistive load; see Fig.13 2 Product specification BUW13F; BUW13AF 2 handbook, halfpage 1 3 MBB008 MAX. 850 V 1000 V 400 V 450 V 1.5 V ...
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... Figs 3 and 4 t < 20 ms; see Fig see Fig.2; note see Fig.2; note 2 h PARAMETER 65% under clean and dust-free conditions. 3 Product specification BUW13F; BUW13AF VALUE UNIT 3.4 K/W 2.5 K/W 35 K/W MIN. MAX. UNIT 850 V 1000 V 400 V ...
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... I = 1.6 A Con Bon Boff Con 250 100 1.6 A; Con 300 100 Product specification BUW13F; BUW13AF MIN. TYP. MAX. UNIT V V 1.5 V 1.5 V 1 ...
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... 1.6 A; Con 300 100 MGK674 handbook, halfpage 100 150 Product specification BUW13F; BUW13AF MIN. TYP. 200 300 200 300 ( 400 800 100 Fig.3 Reverse bias SOAR. MAX. ...
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... Second breakdown limits (independent of temperature). 1997 Aug 100 s 200 s 500 BUW13F BUW13AF Fig.4 Forward bias SOAR. 6 Product specification BUW13F; BUW13AF MGB929 (V) ...
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... Test circuit for collector-emitter sustaining voltage. 1997 Aug Fig.5 Transient thermal impedance. handbook, halfpage 50 V 100 to 200 horizontal oscilloscope vertical 1 MGE252 7 BUW13F; BUW13AF (mA) 250 200 100 0 Fig.7 Oscilloscope display for collector-emitter sustaining voltage. Product specification MGB866 (s) ...
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... Fig.9 Base-emitter voltage as a function of base current; typical values. 1997 Aug 13 (1) (2) (3) ( 100 C. ( 100 C. (1) (2) ( Product specification BUW13F; BUW13AF MGB915 (A) MGB912 ( ...
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... ( 125 C. j handbook, halfpage D.U.T. MGE244 /T = 0.01 ns. r and Con 9 Product specification BUW13F; BUW13AF Fig.11 DC current gain; typical values 90 10% 90 10% ...
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... H. C Fig.14 Test circuit inductive load and reverse bias SOAR. 1997 Aug 13 handbook, halfpage D.U.T. MGE246 = Product specification BUW13F; BUW13AF 10 off Fig.15 Switching time waveforms with inductive load off ...
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... Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT199 1997 Aug scale 16.5 21.5 15.3 7.8 5.45 10.9 15.7 20.5 14.7 6.8 REFERENCES JEDEC EIAJ 11 BUW13F; BUW13AF ( 3.7 0.8 2.1 3.3 6.2 0.4 3.3 0.6 1.9 3.1 5.8 EUROPEAN PROJECTION Product specification SOT199 45 ISSUE DATE 97-06-27 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 BUW13F; BUW13AF 12 Product specification ...
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... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 BUW13F; BUW13AF NOTES 13 Product specification ...
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... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 BUW13F; BUW13AF NOTES 14 Product specification ...
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... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 BUW13F; BUW13AF NOTES 15 Product specification ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...