NDB6050L Fairchild Semiconductor, NDB6050L Datasheet - Page 5

• Manufacturer Part Number: NDB6050L
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GEN
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
1.1
0.9
Figure 7. Breakdown Voltage Variation with
Figure 9. Capacitance Characteristics
1
1
-50
I
Figure 11. Switching Test Circuit
D
R
f = 1 MHz
V
= 250µA
GS
Temperature
-25
GEN
= 0 V
R
2
GS
V
DS
0
T
V
J
3
, DRAIN TO SOURCE VOLTAGE (V)
IN
, JUNCTION TEMPERATURE (°C)
G
2 5
5
5 0
D
S
V
DD
7 5
1 0
R
L
1 0 0
D U T
(continued)
2 0
1 2 5
C iss
V
C oss
3 0
O U T
1 5 0
C rss
1 7 5
5 0
V
t
V
O U T
d(on)
IN
0.0001
1 0
Figure 8. Body Diode Forward Voltage
1 0 %
0.001
8
6
4
2
0
Figure 10. Gate Charge Characteristics
0.01
0
0.1
8 0
1 0
1
0.2
I
D
T = 125°C
Variation with Current and Temperature
= 48A
Figure 12. Switching Waveforms
J
t
5 0 %
o n
0.4
1 0 %
V
SD
2 0
t
9 0 %
PULSE W IDTH
0.6
r
, BODY DIODE FORWARD VOLTAGE (V)
Q
25°C
g
, GATE CHARGE (nC)
0.8
t
d(off)
V
4 0
DS
-55°C
1
= 12V
5 0 %
NDP6050L Rev. C / NDB6050L Rev. D
1.2
9 0 %
t
1 0 %
o f f
9 0 %
6 0
24V
1.4
48V
V
GS
INVERTED
t
= 0V
f
1.6
1.8
8 0