NDB6050L Fairchild Semiconductor, NDB6050L Datasheet - Page 2

• Manufacturer Part Number: NDB6050L
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
W
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
AR
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
DSS
Parameter
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 1)
(Note 1)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
R
V
I
f = 1.0 MHz
D
DD
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 48 A, V
= 25 V, I
= 0 V, I
= 50 V, V
= 16 V, V
= -16 V, V
= V
= 5 V, I
= 10 V, I
= 5 V, V
= 10 V, I
= 25 V, V
= 30 V, I
= 5 V, R
= 48 V,
= 15
GS
, I
D
D
D
DS
GEN
D
D
D
GS
= 250 µA
= 24 A
= 250 µA
D
GS
DS
= 48 A
= 24 A
= 24 A
GS
DS
= 10 V
= 48 A,
= 5 V
= 0 V
= 0 V
= 15
= 0 V,
= 0 V
,
T
T
T
J
J
J
= 125°C
= 125°C
= 125°C
0.65
Min
50
48
10
1
NDP6050L Rev. C / NDB6050L Rev. D
1630
Typ
460
150
320
161
8.2
15
49
36
21
0.025
2000
Max
-100
0.04
0.02
200
250
100
800
400
500
100
300
1.5
48
30
60
1
2
Units
pF
pF
pF
mA
mJ
µA
nA
nA
nS
nS
nS
nS
nC
nC
nC
A
V
V
A
S