NDB6050L Fairchild Semiconductor, NDB6050L Datasheet - Page 3

• Manufacturer Part Number: NDB6050L
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
S
SM
rr
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
SD
JC
JA
Parameter
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= 24 A
= 48 A,
(Note 1)
T
J
= 125°C
Min
35
2
NDP6050L Rev. C / NDB6050L Rev. D
Typ
3.6
75
Max
62.5
144
140
1.3
1.2
1.5
48
8
Units
°C/W
°C/W
ns
A
A
V
A