NDB710A Fairchild Semiconductor, NDB710A Datasheet - Page 5

• Manufacturer Part Number: NDB710A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
6000
3000
2000
1000
300
200
100
1.15
1.05
0.95
Figure 36. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
1.1
0.9
0.1
Figure 7. Breakdown Voltage
1
-50
I
D
R
0.2
= 250µA
Variation with Temperature.
-25
GEN
f = 1 MHz
V
GS
V
= 0 V
DS
0
0.5
T
J
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
25
G
1
50
2
D
S
V
75
DD
5
R
100
L
DUT
10
125
2 0
C oss
C iss
C rss
V
150
(continued)
OUT
175
50
Output, V out
Input, V in
0.01
20
15
10
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage
0.1
30
10
5
0
1
t
0
0.2
d(on)
10%
V
I
Variation with Current and
Temperature.
D
GS
= 42A
= 0V
0.4
V
SD
t
50%
on
40
10%
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
0.6
Q
t
Pulse Width
90%
r
g
, GATE CHARGE (nC)
25°C
0.8
80
t
-55°C
d(off)
50%
1
90%
120
t
V
10%
off
DS
90%
= 20V
1.2
NDP710.SAM
t
Inverted
f
5 0
8 0
1.4
160